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型号:
SFF1601G
PDF下载:
下载PDF文件 在线浏览文档
内容描述:
[16.0 Amperes Insulated Common Cathode Super Fast Recovery Rectifiers]
文件大小:
1098 K
文件页数:
2 Pages
苹果彩票效益平台Logo:
苹果彩票效益平台名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]


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 浏览型号SFF1601G的Datasheet PDF文件第2页 
SFF1601G thru SFF1608G
Pb Free Plating Product
SFF1601G thru SFF1608G
Pb
16.0 Amperes Insulated Common Cathode Super Fast Recovery Rectifiers
Application
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Features
Super fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB/TO-220F-3L
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Tandem Polarity
Suffix "GD"
Series
Tandem Polarity
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
Maximum reverse current @ Rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
80
3.0
- 55 to +150
- 55 to +150
0.975
10
400
35
50
SFF
SFF
SFF
SFF
SFF
SFF
SFF
SFF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
UNIT
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
16
125
300
210
300
400
280
400
500
350
500
600
420
600
1.3
1.7
V
μA
ns
pF
°C/W
°C
°C
Rev.08T
? 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/